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991.
We consider the blowup of solutions of the initial boundary value problem for a class of non‐linear evolution equations with non‐linear damping and source terms. By using the energy compensation method, we prove that when p>max{m, α}, where m, α and p are non‐negative real numbers and m+1, α+1, p+1 are, respectively, the growth orders of the non‐linear strain terms, damping term and source term, under the appropriate conditions, any weak solution of the above‐mentioned problem blows up in finite time. Comparison of the results with the previous ones shows that there exist some clear condition boundaries similar to thresholds among the growth orders of the non‐linear terms, the states of the initial energy and the existence and non‐existence of global weak solutions. Copyright © 2002 John Wiley & Sons, Ltd.  相似文献   
992.
We apply the theory developed in quantum cosmology to a model of charged generalized Brans–Dicke gravity. This is a quantum model of gravitation interacting with a charged Brans–Dicke type scalar field which is considered in the Pauli frame. The Wheeler–DeWitt equation describing the evolution of the quantum Universe is solved in the semiclassical approximation by applying the WKB approximation. The wave function of the Universe is also obtained by applying both the Vilenkin-like and the Hartle–Hawking-like boundary conditions. We then make predictions from the wave functions and infer that the Vilenkin's boundary condition is more reasonable in the Brans–Dicke gravity models leading a large vacuum energy density at the beginning of the inflation.  相似文献   
993.
994.
995.
In this paper,applying the concept of generalized KKM map,we study problems ofvariational inequalities.We weaken convexity(concavity)conditions for a functional of two variables■(x,y)in the general variational inequalities.Last,we show a proof of non-topological degree meth-od of acute angle principle about monotone operator as an application of these results.  相似文献   
996.
本文在分析了均匀掺杂分布式光纤放大器(d-EDFA)的基础上,提出了沿传输方向掺杂浓度单调下降(单变),和降升结合(两变)的两种渐变型分布式光纤放大器,并用传输方程研究了透明传输和最佳掺杂浓度下,受激喇曼散射对均匀、单变和两变型三种d-EDFA的各种特性的影响.  相似文献   
997.
Aliasing effects are investigated for spherical random fields sampled on a finite grid. Using the spherical harmonics expansion, it is shown that for a band-limited spherical random field its trend and spectrum can be uniquely reconstructed from the sampled field if the sampling points are judiciously designed. Analytical expressions are also obtained for aliasing errors in the trend and the spectrum when the field is not band-limited.  相似文献   
998.
Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.  相似文献   
999.
谱约束下对称正交对称矩阵束的最佳逼近   总被引:3,自引:0,他引:3  
讨论了对称正交对称矩阵的广义逆特征值问题,得到了通解表达式和最佳解的表达式。  相似文献   
1000.
Hard films prepared by pulsed high energy density plasma (PHEDP) are characterized by high film/substrate adhesive strength, and high wear resistance. Titanium carbonitride (TiCN) films were deposited onto YG11C (ISO G20) cemented carbide cutting tool substrates by PHEDP at room temperature. XRD, XPS, SEM, AES, etc. were adopted to analyze the phases (elements) composition, microstructure and the interface of the films, respectively. The results show that, the uniform dense films are composed of grains ranging from 70 to 90 nm. According to the AES result, there is a broad transition layer between the film and the substrate, due to the ion implantation effect of the PHEDP. The transition layer is favorable for the film/substrate adhesion.  相似文献   
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